sales@szcinty.com
Обзор продукта
- номер части
- DMT12H090LFDF4-13
- Производитель
- Diodes Incorporated
- Категория продукта
- МОП-транзистор
- Описание
- MOSFET MOSFET BVDSS: 101V 250V X2-DFN2020-6 T&R 10K
Документы и СМИ
- Спецификации
- DMT12H090LFDF4-13
Атрибуты продукта
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 3.4 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 1 Channel
- Package / Case :
- X2-DFN2020-6
- Packaging :
- Reel
- Pd - Power Dissipation :
- 900 MW
- Qg - Gate Charge :
- 6 nC
- Rds On - Drain-Source Resistance :
- 90 mOhms
- Technology :
- SI
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 115 V
- Vgs - Gate-Source Voltage :
- - 12 V, + 12 V
- Vgs th - Gate-Source Threshold Voltage :
- 2.2 V
Описание
MOSFET MOSFET BVDSS: 101V 250V X2-DFN2020-6 T&R 10K
Цена и закупки
Сопутствующий продукт
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