Обзор продукта
- номер части
- DMN2011UFDE-13
- Производитель
- Diodes Incorporated
- Категория продукта
- МОП-транзистор
- Описание
- MOSFET 20V N-Ch Enh Mode 12Vgss 80A .61W
Документы и СМИ
- Спецификации
- DMN2011UFDE-13
Атрибуты продукта
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 11.7 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 1 Channel
- Package / Case :
- U-DFN2020-E-6
- Packaging :
- Reel
- Pd - Power Dissipation :
- 1.97 W
- Qg - Gate Charge :
- 56 nC
- Rds On - Drain-Source Resistance :
- 15 mOhms
- Technology :
- SI
- Tradename :
- PowerDI
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 20 V
- Vgs - Gate-Source Voltage :
- - 12 V, + 12 V
- Vgs th - Gate-Source Threshold Voltage :
- 1 V
Описание
MOSFET 20V N-Ch Enh Mode 12Vgss 80A .61W
Цена и закупки
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