Обзор продукта
- номер части
- TP65H050G4WS
- Производитель
- Transphorm
- Категория продукта
- МОП-транзистор
- Описание
- MOSFET GAN FET 650V 34A TO247
Документы и СМИ
- Спецификации
- TP65H050G4WS
Атрибуты продукта
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 34 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 1 Channel
- Package / Case :
- TO-247-3
- Packaging :
- Bulk
- Pd - Power Dissipation :
- 119 W
- Qg - Gate Charge :
- 24 nC
- Rds On - Drain-Source Resistance :
- 60 mOhms
- Technology :
- SI
- Transistor Polarity :
- P-Channel
- Vds - Drain-Source Breakdown Voltage :
- 650 V
- Vgs - Gate-Source Voltage :
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage :
- 4.8 V
Описание
MOSFET GAN FET 650V 34A TO247
Цена и закупки
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