Спецификации

IXTA180N10T

Channel Mode :

Enhancement

Id - Continuous Drain Current :

180 A

Maximum Operating Temperature :

+ 175 C

Minimum Operating Temperature :

- 55 C

Mounting Style :

SMD/SMT

Number of Channels :

1 Channel

Package / Case :

TO-263-3

Packaging :

Tube

Pd - Power Dissipation :

480 W

Rds On - Drain-Source Resistance :

6.4 mOhms

Technology :

SI

Tradename :

HiPerFET

Transistor Polarity :

N-Channel

Vds - Drain-Source Breakdown Voltage :

100 V