sales@szcinty.com
Обзор продукта
- номер части
- G3R40MT12J
- Производитель
- GeneSiC Semiconductor
- Категория продукта
- МОП-транзистор
- Описание
- MOSFET 1200V 40mO TO-263-7 G3R SiC MOSFET
Документы и СМИ
- Спецификации
- G3R40MT12J
Атрибуты продукта
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 66 A
- Maximum Operating Temperature :
- + 175 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 1 Channel
- Package / Case :
- TO-263-7
- Packaging :
- Tube
- Pd - Power Dissipation :
- 330 W
- Qg - Gate Charge :
- 88 nC
- Rds On - Drain-Source Resistance :
- 40 mOhms
- Technology :
- SiC
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 1.2 kV
- Vgs - Gate-Source Voltage :
- - 5 V, + 15 V
- Vgs th - Gate-Source Threshold Voltage :
- 2.7 V
Описание
MOSFET 1200V 40mO TO-263-7 G3R SiC MOSFET
Цена и закупки
Сопутствующий продукт
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