sales@szcinty.com
Обзор продукта
- номер части
- TK16E60W,S1VX
- Производитель
- Toshiba
- Категория продукта
- МОП-транзистор
- Описание
- MOSFET N-Ch 15.8A 130W FET 600V 1350pF 38nC
Документы и СМИ
- Спецификации
- TK16E60W,S1VX
Атрибуты продукта
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 15.8 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Number of Channels :
- 1 Channel
- Package / Case :
- TO-220-3
- Packaging :
- Tube
- Pd - Power Dissipation :
- 130 W
- Qg - Gate Charge :
- 30 nC
- Rds On - Drain-Source Resistance :
- 160 mOhms
- Technology :
- SI
- Tradename :
- DTMOSIV
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 600 V
- Vgs - Gate-Source Voltage :
- - 30 V, + 30 V
- Vgs th - Gate-Source Threshold Voltage :
- 3.7 V
Описание
MOSFET N-Ch 15.8A 130W FET 600V 1350pF 38nC
Цена и закупки
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