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Обзор продукта
- номер части
- CSD13306W
- Производитель
- Texas Instruments
- Категория продукта
- МОП-транзистор
- Описание
- MOSFET 12-V, N channel NexFET power MOSFET, single WLP 1 mm x 1.5 mm, 10.2 mOhm 6-DSBGA
Документы и СМИ
- Спецификации
- CSD13306W
Атрибуты продукта
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 3.5 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 1 Channel
- Package / Case :
- DSBGA-6
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 1.9 W
- Qg - Gate Charge :
- 11.2 nC
- Rds On - Drain-Source Resistance :
- 10.2 mOhms
- Technology :
- SI
- Tradename :
- NexFET
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 12 V
- Vgs - Gate-Source Voltage :
- - 10 V, + 10 V
- Vgs th - Gate-Source Threshold Voltage :
- 700 mV
Описание
MOSFET 12-V, N channel NexFET power MOSFET, single WLP 1 mm x 1.5 mm, 10.2 mOhm 6-DSBGA
Цена и закупки
Сопутствующий продукт
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