sales@szcinty.com
Обзор продукта
- номер части
- IPDD60R050G7XTMA1
- Производитель
- Infineon Technologies
- Категория продукта
- МОП-транзистор
- Описание
- MOSFET HIGH POWER_NEW
Документы и СМИ
- Спецификации
- IPDD60R050G7XTMA1
Атрибуты продукта
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 47 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 1 Channel
- Package / Case :
- HDSOP-10
- Packaging :
- Cut Tape, Reel
- Pd - Power Dissipation :
- 278 W
- Qg - Gate Charge :
- 68 nC
- Rds On - Drain-Source Resistance :
- 50 mOhms
- Technology :
- SI
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 600 V
- Vgs - Gate-Source Voltage :
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage :
- 3 V
Описание
MOSFET HIGH POWER_NEW
Цена и закупки
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