sales@szcinty.com
Обзор продукта
- номер части
- SCT3080KRC14
- Производитель
- ROHM Semiconductor
- Категория продукта
- МОП-транзистор
- Описание
- MOSFET 1200V N-CH SIC TRENCH
Документы и СМИ
- Спецификации
- SCT3080KRC14
Атрибуты продукта
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 31 A
- Maximum Operating Temperature :
- + 175 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Number of Channels :
- 1 Channel
- Package / Case :
- TO-247-4
- Packaging :
- Tube
- Pd - Power Dissipation :
- 165 W
- Qg - Gate Charge :
- 60 nC
- Rds On - Drain-Source Resistance :
- 80 mOhms
- Technology :
- SiC
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 1.2 kV
- Vgs - Gate-Source Voltage :
- - 4 V, + 22 V
- Vgs th - Gate-Source Threshold Voltage :
- 5.6 V
Описание
MOSFET 1200V N-CH SIC TRENCH
Цена и закупки
Сопутствующий продукт
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