sales@szcinty.com
Обзор продукта
- номер части
- IPB019N08N3 G
- Производитель
- Infineon Technologies
- Категория продукта
- МОП-транзистор
- Описание
- MOSFET N-Ch 80V 180A D2PAK-6 OptiMOS 3
Документы и СМИ
- Спецификации
- IPB019N08N3 G
Атрибуты продукта
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 180 A
- Maximum Operating Temperature :
- + 175 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 1 Channel
- Package / Case :
- TO-263-7
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 300 W
- Qg - Gate Charge :
- 206 nC
- Rds On - Drain-Source Resistance :
- 1.6 mOhms
- Technology :
- SI
- Tradename :
- OptiMOS
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 80 V
- Vgs - Gate-Source Voltage :
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage :
- 2 V
Описание
MOSFET N-Ch 80V 180A D2PAK-6 OptiMOS 3
Цена и закупки
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