Спецификации

IRF7759L2TRPBF

Channel Mode :

Enhancement

Id - Continuous Drain Current :

160 A

Maximum Operating Temperature :

+ 175 C

Minimum Operating Temperature :

- 55 C

Mounting Style :

SMD/SMT

Number of Channels :

1 Channel

Package / Case :

DirectFET-L8

Packaging :

Cut Tape, MouseReel, Reel

Pd - Power Dissipation :

125 W

Qg - Gate Charge :

200 nC

Rds On - Drain-Source Resistance :

1.8 mOhms

Technology :

SI

Tradename :

DirectFET

Transistor Polarity :

N-Channel

Vds - Drain-Source Breakdown Voltage :

75 V

Vgs - Gate-Source Voltage :

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage :

4 V