sales@szcinty.com
Обзор продукта
- номер части
- IXTA2R4N120P
- Производитель
- IXYS
- Категория продукта
- МОП-транзистор
- Описание
- MOSFET 2.4 Amps 1200V 7.5 Rds
Документы и СМИ
- Спецификации
- IXTA2R4N120P
Атрибуты продукта
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 2.4 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 1 Channel
- Package / Case :
- TO-263-3
- Packaging :
- Tube
- Pd - Power Dissipation :
- 125 W
- Qg - Gate Charge :
- 37 nC
- Rds On - Drain-Source Resistance :
- 7.5 Ohms
- Technology :
- SI
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 1.2 kV
- Vgs - Gate-Source Voltage :
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage :
- 2.5 V
Описание
MOSFET 2.4 Amps 1200V 7.5 Rds
Цена и закупки
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