sales@szcinty.com
Обзор продукта
- номер части
- IPD80R1K4P7ATMA1
- Производитель
- Infineon Technologies
- Категория продукта
- МОП-транзистор
- Описание
- MOSFET LOW POWER_NEW
Документы и СМИ
- Спецификации
- IPD80R1K4P7ATMA1
Атрибуты продукта
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 4 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 1 Channel
- Package / Case :
- TO-252-3
- Packaging :
- Cut Tape, Reel
- Pd - Power Dissipation :
- 32 W
- Qg - Gate Charge :
- 10 nC
- Rds On - Drain-Source Resistance :
- 1.4 Ohms
- Technology :
- SI
- Tradename :
- CoolMOS
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 800 V
- Vgs - Gate-Source Voltage :
- - 30 V, + 30 V
- Vgs th - Gate-Source Threshold Voltage :
- 3 V
Описание
MOSFET LOW POWER_NEW
Цена и закупки
Сопутствующий продукт
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