Обзор продукта

номер части
UJ3C065080K3S
Производитель
UnitedSiC
Категория продукта
МОП-транзистор
Описание
MOSFET 650V/80mOhm, SiC, CASCODE, G3, TO-247-3L, REDUCED Rth

Документы и СМИ

Спецификации
UJ3C065080K3S

Атрибуты продукта

Channel Mode :
Enhancement
Id - Continuous Drain Current :
31 A
Maximum Operating Temperature :
+ 175 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
Through Hole
Number of Channels :
1 Channel
Package / Case :
TO-247-3
Packaging :
Tube
Pd - Power Dissipation :
190 W
Qg - Gate Charge :
51 nC
Qualification :
AEC-Q101
Rds On - Drain-Source Resistance :
100 mOhms
Technology :
SiC
Tradename :
SiC FET
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
650 V
Vgs - Gate-Source Voltage :
- 25 V, + 25 V
Vgs th - Gate-Source Threshold Voltage :
4 V

Описание

MOSFET 650V/80mOhm, SiC, CASCODE, G3, TO-247-3L, REDUCED Rth

Цена и закупки

Сопутствующий продукт

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