Обзор продукта

номер части
IRFR4105TRPBF
Производитель
Infineon Technologies
Категория продукта
МОП-транзистор
Описание
MOSFET 55V 1 N-CH HEXFET 45mOhms 22.7nC

Документы и СМИ

Спецификации
IRFR4105TRPBF

Атрибуты продукта

Channel Mode :
Enhancement
Id - Continuous Drain Current :
27 A
Maximum Operating Temperature :
+ 175 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Number of Channels :
1 Channel
Package / Case :
TO-252-3
Packaging :
Cut Tape, MouseReel, Reel
Pd - Power Dissipation :
68 W
Qg - Gate Charge :
34 nC
Rds On - Drain-Source Resistance :
45 mOhms
Technology :
SI
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
55 V
Vgs - Gate-Source Voltage :
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage :
4 V

Описание

MOSFET 55V 1 N-CH HEXFET 45mOhms 22.7nC

Цена и закупки

Сопутствующий продукт

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  • Xilinx
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  • Xilinx
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  • Xilinx
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  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 72-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C64A-7VQG44I
  • STMicroelectronics
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  • STMicroelectronics
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