Спецификации

FQT1N60CTF-WS

Channel Mode :

Enhancement

Id - Continuous Drain Current :

200 mA

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 55 C

Mounting Style :

SMD/SMT

Number of Channels :

1 Channel

Package / Case :

SOT-223-4

Packaging :

Cut Tape, MouseReel, Reel

Pd - Power Dissipation :

2.1 W

Qg - Gate Charge :

6.2 nC

Rds On - Drain-Source Resistance :

11.5 Ohms

Technology :

SI

Tradename :

QFET

Transistor Polarity :

N-Channel

Vds - Drain-Source Breakdown Voltage :

600 V

Vgs - Gate-Source Voltage :

- 30 V, + 30 V

Vgs th - Gate-Source Threshold Voltage :

2 V