sales@szcinty.com
Обзор продукта
- номер части
- TK100A06N1,S4X
- Производитель
- Toshiba
- Категория продукта
- МОП-транзистор
- Описание
- MOSFET MOSFET NCh 2.2ohm VGS10V10uAVDS60V
Документы и СМИ
- Спецификации
- TK100A06N1,S4X
Атрибуты продукта
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 100 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Number of Channels :
- 1 Channel
- Package / Case :
- TO-220-3
- Packaging :
- Tube
- Pd - Power Dissipation :
- 45 W
- Qg - Gate Charge :
- 140 nC
- Rds On - Drain-Source Resistance :
- 2.2 mOhms
- Technology :
- SI
- Tradename :
- U-MOSVIII-H
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 60 V
- Vgs - Gate-Source Voltage :
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage :
- 4 V
Описание
MOSFET MOSFET NCh 2.2ohm VGS10V10uAVDS60V
Цена и закупки
Сопутствующий продукт
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