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Обзор продукта
- номер части
- STD18N60M6
- Производитель
- STMicroelectronics
- Категория продукта
- МОП-транзистор
- Описание
- MOSFET PTD HIGH VOLTAGE
Документы и СМИ
- Спецификации
- STD18N60M6
Атрибуты продукта
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 13 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 1 Channel
- Package / Case :
- DPAK-3
- Packaging :
- Cut Tape, Reel
- Pd - Power Dissipation :
- 110 W
- Qg - Gate Charge :
- 16.8 nC
- Rds On - Drain-Source Resistance :
- 280 mOhms
- Technology :
- SI
- Tradename :
- MDmesh
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 600 V
- Vgs - Gate-Source Voltage :
- - 25 V, + 25 V
- Vgs th - Gate-Source Threshold Voltage :
- 3.25 V
Описание
MOSFET PTD HIGH VOLTAGE
Цена и закупки
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