Спецификации

IRF8304MTRPBF

Channel Mode :

Enhancement

Id - Continuous Drain Current :

170 A

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 40 C

Mounting Style :

SMD/SMT

Number of Channels :

1 Channel

Package / Case :

DirectFET-MX

Packaging :

Cut Tape, MouseReel, Reel

Pd - Power Dissipation :

100 W

Qg - Gate Charge :

42 nC

Rds On - Drain-Source Resistance :

3.2 mOhms

Technology :

SI

Tradename :

DirectFET

Transistor Polarity :

N-Channel

Vds - Drain-Source Breakdown Voltage :

30 V

Vgs - Gate-Source Voltage :

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage :

1.8 V