Обзор продукта

номер части
SI7892BDP-T1-GE3
Производитель
Vishay / Siliconix
Категория продукта
МОП-транзистор
Описание
MOSFET 30V 25A 5.4W 4.2mohm @ 10V

Документы и СМИ

Спецификации
SI7892BDP-T1-GE3

Атрибуты продукта

Channel Mode :
Enhancement
Id - Continuous Drain Current :
25 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Number of Channels :
1 Channel
Package / Case :
PowerPAK-SO-8
Packaging :
Cut Tape, MouseReel, Reel
Pd - Power Dissipation :
5 W
Qg - Gate Charge :
40 nC
Rds On - Drain-Source Resistance :
4.2 mOhms
Technology :
SI
Tradename :
TrenchFET
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
30 V
Vgs - Gate-Source Voltage :
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage :
1 V

Описание

MOSFET 30V 25A 5.4W 4.2mohm @ 10V

Цена и закупки

Сопутствующий продукт

  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C256-6VQG100C
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C256-6TQG144C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 36-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C32A-6VQG44C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 72-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C64A-7VQG44C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 72-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C64A-7VQG44I
  • STMicroelectronics
    Microprocessors - MPU MPU ARM926 Cortex 8-ch DMA 32KB Rom
  • STMicroelectronics
    Embedded - CPLDs (Complex Programmable Logic Devices)

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