sales@szcinty.com
Обзор продукта
- номер части
- SI7106DN-T1-GE3
- Производитель
- Vishay Semiconductors
- Категория продукта
- МОП-транзистор
- Описание
- MOSFET 20V Vds 12V Vgs PowerPAK 1212-8
Документы и СМИ
- Спецификации
- SI7106DN-T1-GE3
Атрибуты продукта
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 19.5 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 1 Channel
- Package / Case :
- PowerPAK-1212-8
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 3.8 W
- Qg - Gate Charge :
- 27 nC
- Rds On - Drain-Source Resistance :
- 6.2 mOhms
- Technology :
- SI
- Tradename :
- TrenchFET
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 20 V
- Vgs - Gate-Source Voltage :
- - 12 V, + 12 V
- Vgs th - Gate-Source Threshold Voltage :
- 600 mV
Описание
MOSFET 20V Vds 12V Vgs PowerPAK 1212-8
Цена и закупки
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