Обзор продукта
- номер части
- TPW1R104PB,L1XHQ
- Производитель
- Toshiba
- Категория продукта
- МОП-транзистор
- Описание
- MOSFET 132W 1MHz Automotive; AEC-Q101
Документы и СМИ
- Спецификации
- TPW1R104PB,L1XHQ
Атрибуты продукта
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 120 A
- Maximum Operating Temperature :
- + 175 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 1 Channel
- Package / Case :
- DSOP-Advance-8
- Packaging :
- Cut Tape, Reel
- Pd - Power Dissipation :
- 132 W
- Qg - Gate Charge :
- 55 nC
- Qualification :
- AEC-Q101
- Rds On - Drain-Source Resistance :
- 1.14 mOhms
- Technology :
- SI
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 40 V
- Vgs - Gate-Source Voltage :
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage :
- 3 V
Описание
MOSFET 132W 1MHz Automotive; AEC-Q101
Цена и закупки
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