sales@szcinty.com
Обзор продукта
- номер части
- HGT1S10N120BNS
- Производитель
- onsemi / Fairchild
- Категория продукта
- IGBT-транзисторы
- Описание
- IGBT Transistors 35A 1200V NPT N-Ch
Документы и СМИ
- Спецификации
- HGT1S10N120BNS
Атрибуты продукта
- Collector- Emitter Voltage VCEO Max :
- 1200 V
- Collector-Emitter Saturation Voltage :
- 2.7 V
- Configuration :
- Single
- Continuous Collector Current at 25 C :
- 35 A
- Maximum Gate Emitter Voltage :
- 20 V
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Package / Case :
- TO-263AB-3
- Packaging :
- Tube
- Pd - Power Dissipation :
- 298 W
- Series :
- HGT1S10N120BNS
- Technology :
- SI
Описание
IGBT Transistors 35A 1200V NPT N-Ch
Цена и закупки
Сопутствующий продукт
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