sales@szcinty.com
Обзор продукта
- номер части
- IXXR110N65B4H1
- Производитель
- IXYS
- Категория продукта
- IGBT-транзисторы
- Описание
- IGBT Transistors 650V/150A TRENCH IGBT GENX4 XPT
Документы и СМИ
- Спецификации
- IXXR110N65B4H1
Атрибуты продукта
- Collector- Emitter Voltage VCEO Max :
- 650 V
- Collector-Emitter Saturation Voltage :
- 1.75 V
- Configuration :
- Single
- Continuous Collector Current at 25 C :
- 150 A
- Maximum Gate Emitter Voltage :
- 20 V
- Maximum Operating Temperature :
- + 175 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Package / Case :
- ISOPLUS 247-3
- Packaging :
- Tube
- Pd - Power Dissipation :
- 455 W
- Series :
- Trench - 650V - 1200V GenX32
- Technology :
- SI
Описание
IGBT Transistors 650V/150A TRENCH IGBT GENX4 XPT
Цена и закупки
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