sales@szcinty.com
Обзор продукта
- номер части
- IGW30N60H3
- Производитель
- Infineon Technologies
- Категория продукта
- IGBT-транзисторы
- Описание
- IGBT Transistors 600V HI SPEED SW IGBT
Документы и СМИ
- Спецификации
- IGW30N60H3
Атрибуты продукта
- Collector- Emitter Voltage VCEO Max :
- 600 V
- Collector-Emitter Saturation Voltage :
- 1.95 V
- Configuration :
- Single
- Continuous Collector Current at 25 C :
- 60 A
- Maximum Gate Emitter Voltage :
- 20 V
- Maximum Operating Temperature :
- + 175 C
- Minimum Operating Temperature :
- - 40 C
- Mounting Style :
- Through Hole
- Package / Case :
- TO-247-3
- Packaging :
- Tube
- Pd - Power Dissipation :
- 187 W
- Series :
- HighSpeed 3
- Technology :
- SI
Описание
IGBT Transistors 600V HI SPEED SW IGBT
Цена и закупки
Сопутствующий продукт
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