Обзор продукта
- номер части
- RGTH00TK65DGC11
- Производитель
- ROHM Semiconductor
- Категория продукта
- IGBT-транзисторы
- Описание
- IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
Документы и СМИ
- Спецификации
- RGTH00TK65DGC11
Атрибуты продукта
- Collector- Emitter Voltage VCEO Max :
- 650 V
- Collector-Emitter Saturation Voltage :
- 1.6 V
- Configuration :
- Single
- Continuous Collector Current at 25 C :
- 35 A
- Maximum Gate Emitter Voltage :
- 30 V
- Maximum Operating Temperature :
- + 175 C
- Minimum Operating Temperature :
- - 40 C
- Mounting Style :
- Through Hole
- Package / Case :
- TO-3PFM
- Packaging :
- Tube
- Pd - Power Dissipation :
- 72 W
- Technology :
- SI
Описание
IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
Цена и закупки
Сопутствующий продукт
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