sales@szcinty.com
Обзор продукта
- номер части
- APTGT200H120G
- Производитель
- Microsemi / Microchip
- Категория продукта
- БТИЗ-модули
- Описание
- IGBT Modules DOR CC6075
Документы и СМИ
- Спецификации
- APTGT200H120G
Атрибуты продукта
- Collector- Emitter Voltage VCEO Max :
- 1.2 kV
- Collector-Emitter Saturation Voltage :
- 1.7 V
- Configuration :
- Full Bridge
- Continuous Collector Current at 25 C :
- 280 A
- Gate-Emitter Leakage Current :
- 500 nA
- Maximum Operating Temperature :
- + 100 C
- Minimum Operating Temperature :
- - 40 C
- Package / Case :
- SP6
- Packaging :
- Tube
- Pd - Power Dissipation :
- 890 W
- Product :
- IGBT Silicon Modules
Описание
IGBT Modules DOR CC6075
Цена и закупки
Сопутствующий продукт
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