Обзор продукта

номер части
CM200DY-24T
Производитель
Mitsubishi Electric
Категория продукта
БТИЗ-модули
Описание
IGBT Modules

Документы и СМИ

Спецификации
CM200DY-24T

Атрибуты продукта

Collector- Emitter Voltage VCEO Max :
1200 V
Collector-Emitter Saturation Voltage :
1.65 V
Configuration :
Dual
Continuous Collector Current at 25 C :
200 A
Gate-Emitter Leakage Current :
0.5 uA
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 40 C
Pd - Power Dissipation :
2380 W
Product :
IGBT Silicon Modules

Описание

IGBT Modules

Цена и закупки

Сопутствующий продукт

  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C256-6VQG100C
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C256-6TQG144C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 36-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C32A-6VQG44C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 72-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C64A-7VQG44C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 72-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C64A-7VQG44I
  • STMicroelectronics
    Microprocessors - MPU MPU ARM926 Cortex 8-ch DMA 32KB Rom
  • STMicroelectronics
    Embedded - CPLDs (Complex Programmable Logic Devices)

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