sales@szcinty.com
Обзор продукта
- номер части
- FF200R12KE4
- Производитель
- Infineon Technologies
- Категория продукта
- БТИЗ-модули
- Описание
- IGBT Modules IGBT-MODULE
Документы и СМИ
- Спецификации
- FF200R12KE4
Атрибуты продукта
- Collector- Emitter Voltage VCEO Max :
- 1200 V
- Collector-Emitter Saturation Voltage :
- 2.05 V
- Configuration :
- Dual
- Continuous Collector Current at 25 C :
- 240 A
- Gate-Emitter Leakage Current :
- 400 nA
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 40 C
- Package / Case :
- 62 mm
- Packaging :
- Tray
- Pd - Power Dissipation :
- 1100 W
- Product :
- IGBT Silicon Modules
Описание
IGBT Modules IGBT-MODULE
Цена и закупки
Сопутствующий продукт
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