sales@szcinty.com
Обзор продукта
- номер части
- BSM15GD120DN2
- Производитель
- Infineon Technologies
- Категория продукта
- БТИЗ-модули
- Описание
- IGBT Modules 1200V 15A 3-PHASE
Документы и СМИ
- Спецификации
- BSM15GD120DN2
Атрибуты продукта
- Collector- Emitter Voltage VCEO Max :
- 1200 V
- Collector-Emitter Saturation Voltage :
- 2.5 V
- Configuration :
- Hex
- Continuous Collector Current at 25 C :
- 25 A
- Gate-Emitter Leakage Current :
- 150 nA
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 40 C
- Package / Case :
- EconoPACK 2
- Packaging :
- Tray
- Pd - Power Dissipation :
- 145 W
- Product :
- IGBT Silicon Modules
Описание
IGBT Modules 1200V 15A 3-PHASE
Цена и закупки
Сопутствующий продукт
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