Обзор продукта
- номер части
- IFF450B12ME4PB11BPSA1
- Производитель
- Infineon Technologies
- Категория продукта
- БТИЗ-модули
- Описание
- IGBT Modules MEDIUM POWER ECONO
Документы и СМИ
- Спецификации
- IFF450B12ME4PB11BPSA1
Атрибуты продукта
- Collector- Emitter Voltage VCEO Max :
- 1200 V
- Collector-Emitter Saturation Voltage :
- 1.75 V
- Configuration :
- Dual
- Continuous Collector Current at 25 C :
- 450 A
- Gate-Emitter Leakage Current :
- 400 nA
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 40 C
- Package / Case :
- 152 mm x 62.5 mm x 20.5 mm
- Packaging :
- Tray
- Pd - Power Dissipation :
- 20 mW
- Product :
- IGBT Silicon Modules
Описание
IGBT Modules MEDIUM POWER ECONO
Цена и закупки
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