sales@szcinty.com
Обзор продукта
- номер части
- 2N6551 TIN/LEAD
- Производитель
- Central Semiconductor
- Категория продукта
- Биполярные транзисторы - BJT
- Описание
- Bipolar Transistors - BJT NPN 120Vcbo 60Vceo 6.0Vebo 5.0A 5.0W
Документы и СМИ
- Спецификации
- 2N6551 TIN/LEAD
Атрибуты продукта
- Collector- Base Voltage VCBO :
- 120 V
- Collector- Emitter Voltage VCEO Max :
- 60 V
- Collector-Emitter Saturation Voltage :
- 1 V
- Configuration :
- Single
- Emitter- Base Voltage VEBO :
- 6 V
- Gain Bandwidth Product fT :
- 70 MHz
- Maximum DC Collector Current :
- -
- Maximum Operating Temperature :
- + 200 C
- Minimum Operating Temperature :
- - 65 C
- Mounting Style :
- Through Hole
- Package / Case :
- TO-39-3
- Packaging :
- Bulk
- Pd - Power Dissipation :
- 1 W
- Series :
- 2N6551
- Transistor Polarity :
- NPN
Описание
Bipolar Transistors - BJT NPN 120Vcbo 60Vceo 6.0Vebo 5.0A 5.0W
Цена и закупки
Сопутствующий продукт
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