Обзор продукта
- номер части
- 2N4232 TIN/LEAD
- Производитель
- Central Semiconductor
- Категория продукта
- Биполярные транзисторы - BJT
- Описание
- Bipolar Transistors - BJT 3.0A 35W 70Vcbo 60Vceo 2.0V
Документы и СМИ
- Спецификации
- 2N4232 TIN/LEAD
Атрибуты продукта
- Collector- Base Voltage VCBO :
- 70 V
- Collector- Emitter Voltage VCEO Max :
- 60 V
- Collector-Emitter Saturation Voltage :
- 2 V
- Configuration :
- Single
- Emitter- Base Voltage VEBO :
- -
- Gain Bandwidth Product fT :
- 4 MHz
- Maximum DC Collector Current :
- -
- Mounting Style :
- Through Hole
- Package / Case :
- TO-66-2
- Packaging :
- Tube
- Pd - Power Dissipation :
- 35 W
- Series :
- 2N4232
- Transistor Polarity :
- NPN
Описание
Bipolar Transistors - BJT 3.0A 35W 70Vcbo 60Vceo 2.0V
Цена и закупки
Сопутствующий продукт
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