Обзор продукта
- номер части
- Jan2N3810L/TR
- Производитель
- Microchip Technology
- Категория продукта
- Биполярные транзисторы - BJT
- Описание
- Bipolar Transistors - BJT
Документы и СМИ
- Спецификации
- Jan2N3810L/TR
Атрибуты продукта
- Collector- Base Voltage VCBO :
- 60 V
- Collector- Emitter Voltage VCEO Max :
- 60 V
- Collector-Emitter Saturation Voltage :
- 0.2 V
- Configuration :
- Dual
- Emitter- Base Voltage VEBO :
- 5 V
- Maximum DC Collector Current :
- 50 mA
- Maximum Operating Temperature :
- + 200 C
- Minimum Operating Temperature :
- - 65 C
- Mounting Style :
- Through Hole
- Package / Case :
- TO-78-6
- Pd - Power Dissipation :
- 350 mW
- Series :
- 2N3810
- Transistor Polarity :
- PNP
Описание
Bipolar Transistors - BJT
Цена и закупки
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