sales@szcinty.com
Обзор продукта
- номер части
- HN1B01F-Y(TE85L,F)
- Производитель
- Toshiba
- Категория продукта
- Биполярные транзисторы - BJT
- Описание
- Bipolar Transistors - BJT Dual Trans PNP NPN SM6, -50V, -0.15A
Документы и СМИ
- Спецификации
- HN1B01F-Y(TE85L,F)
Атрибуты продукта
- Collector- Base Voltage VCBO :
- 50 V
- Collector- Emitter Voltage VCEO Max :
- 50 V
- Collector-Emitter Saturation Voltage :
- 0.1 V
- Configuration :
- Dual
- Emitter- Base Voltage VEBO :
- 5 V
- Gain Bandwidth Product fT :
- 80 MHz
- Maximum DC Collector Current :
- 150 mA
- Maximum Operating Temperature :
- + 125 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Package / Case :
- SM-6
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 300 mW
- Series :
- HN1B01
- Transistor Polarity :
- NPN, PNP
Описание
Bipolar Transistors - BJT Dual Trans PNP NPN SM6, -50V, -0.15A
Цена и закупки
Сопутствующий продукт
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