sales@szcinty.com
Обзор продукта
- номер части
- NJVMJD45H11G
- Производитель
- onsemi
- Категория продукта
- Биполярные транзисторы - BJT
- Описание
- Bipolar Transistors - BJT BIP DPAK PNP 8A 80V
Документы и СМИ
- Спецификации
- NJVMJD45H11G
Атрибуты продукта
- Collector- Emitter Voltage VCEO Max :
- 80 V
- Collector-Emitter Saturation Voltage :
- 1 V
- Emitter- Base Voltage VEBO :
- 5 V
- Gain Bandwidth Product fT :
- 90 MHz
- Maximum DC Collector Current :
- 8 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Package / Case :
- DPAK-3
- Packaging :
- Tube
- Pd - Power Dissipation :
- 20 W
- Qualification :
- AEC-Q101
- Series :
- MJD45H11
- Transistor Polarity :
- PNP
Описание
Bipolar Transistors - BJT BIP DPAK PNP 8A 80V
Цена и закупки
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