Спецификации

MJD50G

Collector- Base Voltage VCBO :

500 V

Collector- Emitter Voltage VCEO Max :

400 V

Collector-Emitter Saturation Voltage :

1 V

Configuration :

Single

Emitter- Base Voltage VEBO :

5 V

Gain Bandwidth Product fT :

10 MHz

Maximum DC Collector Current :

1 A

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 65 C

Mounting Style :

SMD/SMT

Package / Case :

TO-252-3

Packaging :

Tube

Pd - Power Dissipation :

15 W

Series :

MJD50

Transistor Polarity :

NPN