sales@szcinty.com
Обзор продукта
- номер части
- BC850CE6327HTSA1
- Производитель
- Infineon Technologies
- Категория продукта
- Биполярные транзисторы - BJT
- Описание
- Bipolar Transistors - BJT NPN 30 V 100 mA
Документы и СМИ
- Спецификации
- BC850CE6327HTSA1
Атрибуты продукта
- Collector- Base Voltage VCBO :
- 50 V
- Collector- Emitter Voltage VCEO Max :
- 45 V
- Collector-Emitter Saturation Voltage :
- 200 mV
- Configuration :
- Dual
- Emitter- Base Voltage VEBO :
- 6 V
- Gain Bandwidth Product fT :
- 250 MHz
- Maximum DC Collector Current :
- 200 mA
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 65 C
- Mounting Style :
- SMD/SMT
- Package / Case :
- SOT-23-3
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 330 mW
- Qualification :
- AEC-Q101
- Series :
- BC850
- Transistor Polarity :
- NPN
Описание
Bipolar Transistors - BJT NPN 30 V 100 mA
Цена и закупки
Сопутствующий продукт
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