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Обзор продукта
- номер части
- MJF45H11G
- Производитель
- onsemi
- Категория продукта
- Биполярные транзисторы - BJT
- Описание
- Bipolar Transistors - BJT 10A 80V 50W PNP
Документы и СМИ
- Спецификации
- MJF45H11G
Атрибуты продукта
- Collector- Base Voltage VCBO :
- 5 V
- Collector- Emitter Voltage VCEO Max :
- 80 V
- Collector-Emitter Saturation Voltage :
- 1 V
- Configuration :
- Single
- Emitter- Base Voltage VEBO :
- 5 V
- Gain Bandwidth Product fT :
- 40 MHz
- Maximum DC Collector Current :
- 10 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Package / Case :
- TO-220FP-3
- Packaging :
- Tube
- Pd - Power Dissipation :
- 36 W
- Series :
- MJF45H11
- Transistor Polarity :
- PNP
Описание
Bipolar Transistors - BJT 10A 80V 50W PNP
Цена и закупки
Сопутствующий продукт
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