Спецификации

CGHV1F025S

Gain :

11 dB

Id - Continuous Drain Current :

2 A

Maximum Drain Gate Voltage :

-

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 40 C

Mounting Style :

SMD/SMT

Operating Frequency :

15 GHz

Output Power :

25 W

Package / Case :

DFN-12

Packaging :

Cut Tape, Reel

Pd - Power Dissipation :

-

Technology :

GaN-on-SiC

Transistor Polarity :

N-Channel

Transistor Type :

HEMT

Vds - Drain-Source Breakdown Voltage :

100 V

Vgs - Gate-Source Breakdown Voltage :

- 10 V to 2 V