Обзор продукта

номер части
MXPLAD7.5KP13A
Производитель
Microchip Technology
Категория продукта
Диоды для TVS / подавители ЭСР
Описание
ESD Suppressors / TVS Diodes Hi Rel TVS

Документы и СМИ

Спецификации
MXPLAD7.5KP13A

Атрибуты продукта

Breakdown Voltage :
14.4 V
Clamping Voltage :
21.5 V
Ipp - Peak Pulse Current :
349 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Number of Channels :
1 Channel
Package / Case :
Mini-PLAD-1
Packaging :
Bulk
Polarity :
Unidirectional
Pppm - Peak Pulse Power Dissipation :
7.5 kW
Product Type :
TVS Diodes
Series :
MA
Termination Style :
SMD/SMT
Working Voltage :
13 V

Описание

ESD Suppressors / TVS Diodes Hi Rel TVS

Цена и закупки

Сопутствующий продукт

  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C256-6VQG100C
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C256-6TQG144C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 36-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C32A-6VQG44C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 72-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C64A-7VQG44C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 72-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C64A-7VQG44I
  • STMicroelectronics
    Microprocessors - MPU MPU ARM926 Cortex 8-ch DMA 32KB Rom
  • STMicroelectronics
    Embedded - CPLDs (Complex Programmable Logic Devices)

Вас также может заинтересовать

Часть Производитель Снабжать Описание
AS6C8008B-55ZIN Alliance Memory 3,000 SRAM
IS62WV2568FBLL-45BLI ISSI 3,000 SRAM 2Mb, Low Power/Power Saver,Async,256K x 8,45ns,2.2v~3.6v,36 Ball mBGA (6x8 mm), RoHS
IS64VF12832A-7.5TQLA3 ISSI 3,000 SRAM 4Mb 2.5V 7.5ns 128K x 32 Sync SRAM
IS64WV25616EFBLL-10CTLA3 ISSI 3,000 SRAM 4Mb,High-Speed/Low Power,Async with ECC,256K x 16,10ns,2.4v-3.6v,44 Pin TSOP II, RoHS, Automotive temp
IS61NLF51218B-7.5TQLI ISSI 3,000 SRAM 8Mb,"No-Wait"/Flow-Through,Sync,512K x 18,7.5ns,3.3v I/O,100 Pin TQFP, RoHS
IS61LF25636B-7.5TQLI ISSI 3,000 SRAM 8Mb,Flow-Through,Sync,256K x 36,7.5ns,3.3v I/O,100 Pin TQFP, RoHS
IS61NLF25636B-7.5TQLI ISSI 3,000 SRAM 8Mb,"No-Wait"/Flow-Through,Sync,256K x 36,7.5ns,3.3v I/O,100 Pin TQFP, RoHS
IS61WV12824-8BL-TR ISSI 3,000 SRAM 3Mb,High-Speed,Async,128K x 24,8ns,3.3v,119 Ball PBGA (14x22 mm), RoHS
AS7C4096A-20JCN Alliance Memory 190 SRAM 4M, 3.3V, 20ns, FAST 512K x 8 Asynch SRAM
AS7C31026C-12JIN Alliance Memory 7,910 SRAM 1M, 3.3V, 12ns, FAST 64K x 16 Asynch SRAM
IS61NLF51218A-7.5TQLI ISSI 3,000 SRAM 8Mb,"No-Wait"/Flow-Through,Sync,512K x 18,7.5ns,3.3v I/O,100 Pin TQFP, RoHS
IS61NVP25636A-200TQLI ISSI 3,000 SRAM 8Mb 256Kx36 200Mhz Sync SRAM 2.5v
IS61LPS25636A-200TQ2LI ISSI 3,000 SRAM 8M (256Kx36) 200MHz Sync SRAM 3.3v
IS65WV102416DBLL-55CTLA3 ISSI 3,000 SRAM 16Mb, Low Power/Power Saver,Async, 1Mb x 16/2Mb x 8, 45ns, 2.2v~3.6v,48 Pin TSOP I, RoHS
IS61WV51216EEALL-20TLI ISSI 3,000 SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16, 20ns,1.65V-2.2V, 44 Pin TSOP II, RoHS