Resumo do Produto
- Número da peça
- 1812Y2K50470GCT
- Fabricante
- Syfer / Knowles
- Categoria de Produto
- Capacitores de cerâmica multicamada MLCC - SMD/SMT
- Descrição
- Multilayer Ceramic Capacitors MLCC - SMD/SMT
Documentos e mídia
- Folhas de dados
- 1812Y2K50470GCT
Atributos do produto
- Capacitance :
- 47 pF
- Case Code - in :
- 1812
- Case Code - mm :
- 4532
- Dielectric :
- C0G (NP0)
- Height :
- 2.5 mm
- Maximum Operating Temperature :
- + 125 C
- Minimum Operating Temperature :
- - 55 C
- Product :
- General Type MLCCs
- Termination :
- Flexible (Soft)
- Termination Style :
- SMD/SMT
- Tolerance :
- 2 %
- Voltage Rating DC :
- 2.5 kVDC
Descrição
Multilayer Ceramic Capacitors MLCC - SMD/SMT
Preço e Aquisição
Produto Associado
Você também pode estar interessado em
Papel | Fabricante | Estoque | Descrição |
---|---|---|---|
MRF314 | MACOM | 2 | RF Bipolar Transistors 30-200MHz 30Watts 28Volt Gain 10dB |
SD1275-01 | Advanced Semiconductor, Inc. | 5 | RF Bipolar Transistors RF Transistor |
MRF10502 | MACOM | 2 | RF Bipolar Transistors 1025-1150MHz 500W Gain 8.5dB |
MRF313 | Advanced Semiconductor, Inc. | 1 | RF Bipolar Transistors RF Transistor |
SD1480 | Advanced Semiconductor, Inc. | 10 | RF Bipolar Transistors RF Transistor |
BFP 520 H6327 | Infineon Technologies | 174 | RF Bipolar Transistors RF BIP TRANSISTOR |
MRF553 | Advanced Semiconductor, Inc. | 12 | RF Bipolar Transistors RF Transistor |
BFP 640ESD H6327 | Infineon Technologies | 6,747 | RF Bipolar Transistors RF BIP TRANSISTORS |
NSVF4009SG4T1G | onsemi | 1,883 | RF Bipolar Transistors BIP NPN 40MA 3.5V FT=25G |
MRF1000MB | Advanced Semiconductor, Inc. | 8 | RF Bipolar Transistors RF Transistor |
BFS20W,115 | Nexperia | 3,159 | RF Bipolar Transistors TRANS HV TAPE-7 |
BFP 460 H6327 | Infineon Technologies | 6,166 | RF Bipolar Transistors RF BIP TRANSISTOR |
2SC5087R(TE85L,F) | Toshiba | 2,248 | RF Bipolar Transistors RF Device VHF/UHF 12V 150mW 13.5dB |
BFP 193W H6327 | Infineon Technologies | 197 | RF Bipolar Transistors RF BIP TRANSISTOR |
MT3S113TU,LF | Toshiba | 2,970 | RF Bipolar Transistors RF Bipolar Transistor .1A 900mW |