CL10A106MA8NRNC - Samsung Electro-Mechanics

Descrição: Multilayer Ceramic Capacitors MLCC - SMD/SMT 10uF+/-20% 25V X5R 1608

Multilayer Ceramic Capacitors MLCC - SMD/SMT 10uF+/-20% 25V X5R 1608

XC2C256-6VQG100C

Xilinx

CPLD - Complex Programmable Logic Devices XC2C256-6VQG100C
XC2C256-6TQG144C

Xilinx

CPLD - Complex Programmable Logic Devices XC2C256-6TQG144C
XC9536XL-10VQG44C

Xilinx

CPLD - Complex Programmable Logic Devices 3.3V 36-mc CPLD
XC2C32A-6VQG44C

Xilinx

CPLD - Complex Programmable Logic Devices XC2C32A-6VQG44C
XC9572XL-10VQG44C

Xilinx

CPLD - Complex Programmable Logic Devices 3.3V 72-mc CPLD
XC2C64A-7VQG44C

Xilinx

CPLD - Complex Programmable Logic Devices XC2C64A-7VQG44C
XC9572XL-10VQG64C

Xilinx

CPLD - Complex Programmable Logic Devices 3.3V 72-mc CPLD
XC2C64A-7VQG44I

Xilinx

CPLD - Complex Programmable Logic Devices XC2C64A-7VQG44I
SPEAR300-2

STMicroelectronics

Microprocessors - MPU MPU ARM926 Cortex 8-ch DMA 32KB Rom
XC2C512-10FT256I

STMicroelectronics

Embedded - CPLDs (Complex Programmable Logic Devices)

Papel	Fabricante	Estoque	Descrição
AS4C16M16SA-6TCNTR	Alliance Memory	14,188	DRAM
MT47H64M16NF-25E AAT:M TR	Micron	10,000	DRAM DDR2 1G 64MX16 FBGA
MT48H32M16LFB4-6 IT:C TR	Micron	8,313	DRAM MOBILE SDRAM 512M 32MX16 FBGA
MT40A2G8JC-062E IT:E	Micron	1,260	DRAM DDR4 16G 2GX8 FBGA
MT41K512M8DA-107 XIT:P	Micron	2,578	DRAM DDR3 4G 512MX8 FBGA
MT41K1G8RKB-107:P	Micron	1,310	DRAM DDR3 8G 1GX8 FBGA DDP
MT46H64M16LFBF-5 IT:B TR	Micron	4,641	DRAM MOBILE DDR 1G 64MX16 FBGA
MT53D512M16D1DS-046 AIT:D	Micron	2,720	DRAM LPDDR4 8G 512MX16 FBGA
MT41K256M8DA-125:K TR	Micron	2,000	DRAM DDR3 2G 256MX8 FBGA
IS42S16160G-7TL-TR	ISSI	6,000	DRAM 256M 16Mx16 143MHz SDRAM, 3.3v
MT40A1G16KNR-062E:E	Micron	2,139	DRAM DDR4 16G 1GX16 FBGA DDP
IS42S16160G-7BLI-TR	ISSI	4,948	DRAM 256M 16Mx16 143Mhz SDRAM, 3.3v
IS42SM16320E-75BLI	ISSI	2,436	DRAM 512Mb 32Mx16 166MHz Mobile SDRAM
MT46V64M8CY-5B:J	Micron	2,736	DRAM DDR 512M 64MX8 FBGA
MT41K128M16JT-125 AUT:K	Micron	2,419	DRAM DDR3 2G 128MX16 FBGA