rfq@cintymcu.com
Documentos e mídia
- Folhas de dados
- TK12E80W,S1X
Atributos do produto
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 11.5 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Number of Channels :
- 1 Channel
- Package / Case :
- TO-220-3
- Packaging :
- Tube
- Pd - Power Dissipation :
- 165 W
- Qg - Gate Charge :
- 23 nC
- Rds On - Drain-Source Resistance :
- 380 mOhms
- Technology :
- SI
- Tradename :
- DTMOSIV
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 800 V
- Vgs - Gate-Source Voltage :
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage :
- 3 V
Descrição
MOSFET N-Ch 800V 1400pF 23nC 11.5A 165W
Preço e Aquisição
Produto Associado
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