Documentos e mídia
- Folhas de dados
- IXFQ30N60X
Atributos do produto
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 30 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Number of Channels :
- 1 Channel
- Package / Case :
- TO-3P-3
- Pd - Power Dissipation :
- 500 W
- Qg - Gate Charge :
- 56 nC
- Rds On - Drain-Source Resistance :
- 155 mOhms
- Technology :
- SI
- Tradename :
- HiPerFET
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 600 V
- Vgs - Gate-Source Voltage :
- - 30 V, + 30 V
- Vgs th - Gate-Source Threshold Voltage :
- 2.5 V
Descrição
MOSFET MSFT N-CH ULTRA JNCT X3&44
Preço e Aquisição
Produto Associado
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