rfq@cintymcu.com
Resumo do Produto
- Número da peça
- IRF640NSTRRPBF
- Fabricante
- Infineon Technologies
- Categoria de Produto
- MOSFET
- Descrição
- MOSFET 200V 1 N-CH HEXFET 150mOhms 44.7nC
Documentos e mídia
- Folhas de dados
- IRF640NSTRRPBF
Atributos do produto
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 18 A
- Maximum Operating Temperature :
- + 175 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 1 Channel
- Package / Case :
- D2PAK-3
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 150 W
- Qg - Gate Charge :
- 44.7 nC
- Rds On - Drain-Source Resistance :
- 150 mOhms
- Technology :
- SI
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 200 V
- Vgs - Gate-Source Voltage :
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage :
- 4 V
Descrição
MOSFET 200V 1 N-CH HEXFET 150mOhms 44.7nC
Preço e Aquisição
Produto Associado
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