Resumo do Produto

Número da peça
TK39A60W,S4VX
Fabricante
Toshiba
Categoria de Produto
MOSFET
Descrição
MOSFET N-Ch DTMOSIV 600 V 50W 4100pF 38.8A

Documentos e mídia

Folhas de dados
TK39A60W,S4VX

Atributos do produto

Channel Mode :
Enhancement
Id - Continuous Drain Current :
38.8 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
Through Hole
Number of Channels :
1 Channel
Package / Case :
TO-220FP-3
Packaging :
Tube
Pd - Power Dissipation :
50 W
Qg - Gate Charge :
110 nC
Rds On - Drain-Source Resistance :
55 mOhms
Technology :
SI
Tradename :
DTMOSIV
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
600 V
Vgs - Gate-Source Voltage :
- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage :
3.7 V

Descrição

MOSFET N-Ch DTMOSIV 600 V 50W 4100pF 38.8A

Preço e Aquisição

Produto Associado

  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C256-6VQG100C
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C256-6TQG144C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 36-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C32A-6VQG44C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 72-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C64A-7VQG44C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 72-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C64A-7VQG44I
  • STMicroelectronics
    Microprocessors - MPU MPU ARM926 Cortex 8-ch DMA 32KB Rom
  • STMicroelectronics
    Embedded - CPLDs (Complex Programmable Logic Devices)

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