Resumo do Produto
- Número da peça
- SCTW40N120G2VAG
- Fabricante
- STMicroelectronics
- Categoria de Produto
- MOSFET
- Descrição
- MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 33 A, 75 mOhm
Documentos e mídia
- Folhas de dados
- SCTW40N120G2VAG
Atributos do produto
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 36 A
- Maximum Operating Temperature :
- + 200 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Number of Channels :
- 1 Channel
- Package / Case :
- HiP-247-3
- Packaging :
- Tube
- Pd - Power Dissipation :
- 278 W
- Qg - Gate Charge :
- 61 nC
- Qualification :
- AEC-Q101
- Rds On - Drain-Source Resistance :
- 100 mOhms
- Technology :
- SiC
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 1.2 kV
- Vgs - Gate-Source Voltage :
- - 10 V, + 22 V
- Vgs th - Gate-Source Threshold Voltage :
- 4.9 V
Descrição
MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 33 A, 75 mOhm
Preço e Aquisição
Produto Associado
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