Folhas de dados

SIZ926DT-T1-GE3

Channel Mode :

Enhancement

Id - Continuous Drain Current :

40 A, 60 A

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 55 C

Mounting Style :

SMD/SMT

Number of Channels :

2 Channel

Package / Case :

PowerPAIR-6x5-8

Packaging :

Cut Tape, MouseReel, Reel

Pd - Power Dissipation :

20.2 W, 40 W

Qg - Gate Charge :

12.5 nC, 27 nC

Rds On - Drain-Source Resistance :

2.2 mOhms, 4.8 mOhms

Technology :

SI

Tradename :

TrenchFET

Transistor Polarity :

N-Channel

Vds - Drain-Source Breakdown Voltage :

25 V

Vgs - Gate-Source Voltage :

- 12 V, + 16 V

Vgs th - Gate-Source Threshold Voltage :

2.2 V