rfq@cintymcu.com
Resumo do Produto
- Número da peça
- SCTW35N65G2V
- Fabricante
- STMicroelectronics
- Categoria de Produto
- MOSFET
- Descrição
- MOSFET PTD NEW MAT & PWR SOLUTION
Documentos e mídia
- Folhas de dados
- SCTW35N65G2V
Atributos do produto
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 45 A
- Maximum Operating Temperature :
- + 200 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Number of Channels :
- 1 Channel
- Package / Case :
- HiP-247-3
- Packaging :
- Tube
- Pd - Power Dissipation :
- 240 W
- Qg - Gate Charge :
- 73 nC
- Rds On - Drain-Source Resistance :
- 67 mOhms
- Technology :
- SiC
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 650 V
- Vgs - Gate-Source Voltage :
- - 10 V, + 22 V
- Vgs th - Gate-Source Threshold Voltage :
- 5 V
Descrição
MOSFET PTD NEW MAT & PWR SOLUTION
Preço e Aquisição
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